First principles design of Ohmic spin diodes based on quaternary Heusler compounds

The Ohmic spin diode (OSD) is a recent concept in spintronics, which based on half-metallic magnets and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures well semiconducting behavior within same family. Using state-of-the-art first-principles calculations combined with nonequilibrium Green's function method, we design four different OSDs quaternary compounds. All exhibit linear current–voltage (I–V) characteristics zero threshold voltage VT. We show that small leakage current, stems from overlap of conduction valence band edges opposite channels around Fermi level SGS electrodes. obtained on/off current ratios vary between 30 105. Our results can pave way experimental fabrication family ordered